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Gelest AKT872

Gelest TITANIUM ISOPROPOXIDE (AKT872) functions as a catalyst and intermediate. This product is commonly used in chemical production.

Chemical Name: Titanium tetraisopropanolate

CAS Number: 546-68-9

Synonyms: Isopropyl orthotitanate, Isopropyl titanate(IV) ((C3H7O)4Ti), Tetraisopropanolatotitanium, Tetraisopropoxytitanium, Tetraisopropoxytitanium(IV), Tetraisopropyl orthotitanate, Tetraisopropyl titanate, Tetrakis(isopropanolato)titanium, Tetrakis(isopropoxide)titanium, Tetrakis(isopropoxy)titanium, Tetrakis(isopropylato)titanium(IV), Tetrakis(isopropyloxy)titanium, TIPT, Titanium isopropoxide, Titanium isopropylate, Titanium tetraisopropoxide, Titanium tetraisopropylate, Titanium tetrakis(iso-propoxide), Titanium tetrakis(isopropoxide), Titanium(4+) isopropoxide, Titanium(IV) isopropoxide

Safety Data Sheet

Enhanced TDS

Knowde-enriched technical product data sheet

Identification & Functionality

Applications & Uses

Markets
Applications
Applicable Processes
Applications
  • Vapor phase pyrolysis gives oxide
  • Yields coatings of barium titanate in combination with Ba(OR)2
  • Utilized in spray pyrolysis synthesis of BaTiO3 and SrTiO3
  • Catalyst for rearrangement and cleavage of epoxy alcohols
  • Catalyst for cyclization of ω-amino acids to lactams
  • In combination with lead alkyls yields lead zirconate titanate (PZT) films by Metal-Organic Chemical Vapor Deposition (MOCVD)
  • In combination with triethylamine and trimethylchlorosilane extends aldehydes to two carbons to enals
  • Provides scratch-resistance for glass bottles by pyrolytic coating at 500 °C

Properties

Soluble in
Isopropanol, Heptane
Chemical Properties
ValueUnitsTest Method / Conditions
Delta H Vaporization14.7kcal/mole-
Boiling Point (at 1 mmHg)58.0°C-
Melting Point15 - 19°C-
Enthalpy of Formation-377.0kcal/mole-
Enthalpy of Evaporation14.7kcal/mole-
Typical Properties
ValueUnitsTest Method / Conditions
Hydrolytic Sensitivity7 (Reacts slowly with moisture/water)--
Density (at 20°C)0.937g/ml-
Flash Point25.0°C-
Refractive Index (at 20°C)1.4654--
Viscosity2.0cSt-
Vapor Pressure (at 50°C)0.9mmHg-
Vapor Pressure (at 100°C)19.0mmHg-
Molecular Complexity1.4--
Metal Content (Ti)16.6 - 16.9%-
Molecular Weight284.25g/mol-

Regulatory & Compliance

Technical Details & Test Data

Extraction Process
  • Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. In most cases, ALD reactions use two chemical precursors which react with a surface one at a time in a sequential, self-limiting, manner.
  • A thin film results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is their conformality and the tact that the amount of control provided by an ALD arrangement (where the reacting precursors are spatially separated) allows to obtain very thin deposited layers (as fine as 0.1 A per cycle).
  • Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films, but are stable enough to be handled and safely delivered to the reaction chamber.

Packaging & Availability

Standard Packaging
  • 100 g
  • 2 kg
  • 17 kg
  • 190 kg