Enhanced TDS
Knowde-enriched technical product data sheet
Identification & Functionality
- Chemical Family
- Chemical Name
- Base Chemicals Functions
- Molecular formula
- C₁₂H₂₈O₄Ti
- Technologies
- Product Families
- Chemical Structure
Applications & Uses
- Markets
- Applications
- Applicable Processes
- Applications
- Vapor phase pyrolysis gives oxide
- Yields coatings of barium titanate in combination with Ba(OR)2
- Utilized in spray pyrolysis synthesis of BaTiO3 and SrTiO3
- Catalyst for rearrangement and cleavage of epoxy alcohols
- Catalyst for cyclization of ω-amino acids to lactams
- In combination with lead alkyls yields lead zirconate titanate (PZT) films by Metal-Organic Chemical Vapor Deposition (MOCVD)
- In combination with triethylamine and trimethylchlorosilane extends aldehydes to two carbons to enals
- Provides scratch-resistance for glass bottles by pyrolytic coating at 500 °C
Properties
- Soluble in
- Isopropanol, Heptane
- Chemical Properties
Value Units Test Method / Conditions Delta H Vaporization 14.7 kcal/mole - Boiling Point (at 1 mmHg) 58.0 °C - Melting Point 15 - 19 °C - Enthalpy of Formation -377.0 kcal/mole - Enthalpy of Evaporation 14.7 kcal/mole - - Typical Properties
Value Units Test Method / Conditions Hydrolytic Sensitivity 7 (Reacts slowly with moisture/water) - - Density (at 20°C) 0.937 g/ml - Flash Point 25.0 °C - Refractive Index (at 20°C) 1.4654 - - Viscosity 2.0 cSt - Vapor Pressure (at 50°C) 0.9 mmHg - Vapor Pressure (at 100°C) 19.0 mmHg - Molecular Complexity 1.4 - - Metal Content (Ti) 16.6 - 16.9 % - Molecular Weight 284.25 g/mol -
Regulatory & Compliance
Technical Details & Test Data
- Extraction Process
- Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. In most cases, ALD reactions use two chemical precursors which react with a surface one at a time in a sequential, self-limiting, manner.
- A thin film results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is their conformality and the tact that the amount of control provided by an ALD arrangement (where the reacting precursors are spatially separated) allows to obtain very thin deposited layers (as fine as 0.1 A per cycle).
- Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films, but are stable enough to be handled and safely delivered to the reaction chamber.
Packaging & Availability
- Standard Packaging
- 100 g
- 2 kg
- 17 kg
- 190 kg