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Gelest INBO009

Gelest BORAZINE (INBO009) is the preferred precursor for hexagonal boron nitride (h-BN) films. It functions as a precursor and is commonly used in chemical production and semiconductor manufacturing.

Chemical Name: Borazine

CAS Number: 6569-51-3

Chemical Family: Boron-based Compounds, Heterocyclic Compounds

Knowde Enhanced TDS

Identification & Functionality

Chemical Name
Base Chemicals Functions
Chemical Structure

Features & Benefits

Product Background

Gelest has a long history of producing borazine and is the leading supplier of borazine worldwide. Borazine is the preferred precursor for hexagonal boron nitride (h-BN) films as it has the correct B-N ratio, a B-N ring structure, and no carbon by-products upon formation of boron nitride. Hexagonal boron nitride is a material of great interest due to its wide band gap (5.955 eV)1, high thermal and chemical stability, high electrical resistivity, high thermal conductivity, and high thermal shock resistance. Two dimensional (2D) h-BN films can be grown by chemical vapor deposition (CVD) of borazine on a copper or nickel foil substrate.2,3,4

Product Highlights
  • Borazine is the preferred precursor for hexagonal boron nitride (h-BN) films as it has the correct B-N ratio, a B-N ring structure, and no carbon by-products upon formation of boron nitride.
  • Hexagonal boron nitride is a material of great interest due to its wide band gap (5.955 eV)1, high thermal and chemical stability, high electrical resistivity, high thermal conductivity, and high thermal shock resistance.
  • Two dimensional (2D) h-BN films can be grown by chemical vapor deposition (CVD) of borazine on a copper or nickel foil substrate.

Applications & Uses

Applications

Applications of Hexagonal Boron Nitride Produced from Borazine

  • Hexagonal boron nitride films produced by CVD of borazine have been explored in several applications including semiconductors, optoelectronics, and high temperature ceramic coatings among others.5 Jang, et al. have demonstrated the use of h-BN films as gate dielectrics and measured the dielectric contstant of h-BN films of varying thicknesses between gold substrates on a SiO2/Si substrate.
  • The dielectric constant was 3-4 and was independent of film thickness (1.2 nm – 30 nm).4 Separately, Bao, et al. have investigated the heat dissipation capacity of h-BN films for use as lateral heat spreaders in electrically insulating packaging applications. Single layer films grown by CVD on a SiO2/Si substrate showed better cooling efficiency compared to micron films prepared by dispersion of boron nitride powder.6,7

Properties

Physical Form
Chemical Properties
ValueUnitsTest Method / Conditions
Boiling Point (at 0.08 mmHg)55.0°C-
Melting Point-58.0°C-
Typical Properties
ValueUnitsTest Method / Conditions
Density0.81g/mL-

Packaging & Availability

Packaging Information
  • Packaged in stainless steel bubbler or cylinder
  • Custom packaging available including in your cylinder or bubbler