Gelest SIO6700.0

Identification & Functionality

Chemical Family: Siloxanes
Chemical Name: Octamethylcyclotetrasiloxane D4
Base Chemicals Functions: Intermediate
Molecular formula: C₈H₂₄O₄Si₄
Technologies: Base Chemicals & Intermediates
Product Families: Base Chemicals & Intermediates — Intermediates
Other Intermediates
Chemical Structure

Applications & Uses

Markets: Industrial
Applications: Industrial — Chemical & Industrial Manufacturing
Chemical Manufacturing
Applicable Processes: Chemicals Production,
Polymer Manufacturing

Properties

	Value	Units	Test Method / Conditions
Dipole Moment	1.09	debye	-
Vapor Pressure (at 23°C)	1.0	mmHg	-
Ring Strain	1.0	kJ/mol	-
Surface Tension (at 20 °C)	17.9	mN/m	-
Critical Temperature	314.0	°C	-
Critical Pressure	1.03	mPa	-
Cryoscopic Constant	11.2	-	-
Ethylene Acrylate Copolymer (polymerization)	79.0	kJ/mol	-
Octanol/water Partition Coefficient (log Kow)	5.1	-	-
Hydrolytic Sensitivity	1 (No significant reaction with aqueous systems)	-	-
Surface Tension	17.9	mN/m	-
Molecular Weight	296.61	g/mol	-
Purity	0.98	-	-
Density	0.956	g/ml	-
Dielectric Constant	2.39	F/m	-
Flash Point	51.0	°C	-
Refractive Index (at 20°C)	1.3968	-	-
Viscosity (at 25°C)	2.3	cSt	-

	Value	Units	Test Method / Conditions
Specific Heat	502.0	J/gm/°C	-
Auto-ignition Temperature	400.0	°C	-
Coefficient of Thermal Expansion	0.8 x 10⁻³	K⁻¹	-

	Value	Units	Test Method / Conditions
Water	50.0	g/l	-

Regulatory & Compliance

Chemical Inventories: AICS (Australia),
CICR (Turkey),
DSL (Canada),
EINECS (EU),
ENCS (Japan),
IECSC (China),
INSQ (Mexico),
KECI (Korea),
NZIoC (New Zealand),
PICCS (Phillipines),
TSCA (USA)

Technical Details & Test Data

Extraction Process: Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. In most cases, ALD reactions use two chemical precursors which react with a surface one at a time in a sequential, self-limiting, manner.

A thin film results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is their conformality and the tact that the amount of control provided by an ALD arrangement (where the reacting precursors are spatially separated) allows to obtain very thin deposited layers (as fine as 0.1 A per cycle).

Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films, but are stable enough to be handled and safely delivered to the reaction chamber.

Packaging & Availability

Knowde Enhanced TDS